Impact ionization rates for electrons and holes in GaAs1−xSbxalloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88776
Reference10 articles.
1. Heterojunction III—V alloy photodetectors for high-sensitivity 1.06-µm optical receivers
2. Low‐threshold room‐temperature double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbxinjection lasers at 1‐μm wavelengths
3. Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbxdouble heterostructure LED’s in the 1‐μm wavelength region
4. Unequal electron and hole impact ionization coefficients in GaAs
5. Impact ionization coefficients for electrons and holes in In0.14Ga0.86As
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