Affiliation:
1. MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University , Xi'an 710072, China
Abstract
Ferroelectric heterostructures hold great promise for developing multifunctional memristors and optoelectronic devices. In this study, we report a ferroelectrically modulated photoresponse and optically modulated electroresistance behaviors in the Pt/PbZr0.2Ti0.8O3(PZT)/Nb-doped SrTiO3 (NSTO) heterostructure. The short-circuit photocurrent rises from 28 nA (after poling at +5 V) to 345 nA (after poling at −5 V) when illuminated with 360 nm of 10 mW·cm−2, exhibiting a massive photocurrent variation ratio of 1230%. This result can be attributed to the modulation of the ferroelectric polarization on the built-in field at the PZT/NSTO interface, which impacts the separation of photogenerated carriers. Furthermore, the heterostructure has a large high/low resistance ratio of 6 × 105%, which decreases to 2 × 104% when illuminated with 360 nm light. This finding is attributed to ferroelectric polarization and light illumination modulating the barrier height and width. Overall, this research suggests a promising strategy for developing self-powered heterojunction photodetectors and multifunctional memory devices.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Key Research and Development Projects of Shaanxi Province
Natural Science Basic Research Program of Shaanxi Province
Natural Science Foundation of Shaanxi Province
Subject
Physics and Astronomy (miscellaneous)