Plasma‐enhanced chemical vapor deposition of low‐resistive tungsten thin films-Reference-Cited by-同舟云学术

Plasma‐enhanced chemical vapor deposition of low‐resistive tungsten thin films

Published:1991-02-25 Issue:8 Volume:58 Page:837-839
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Yong Tae,Min Suk‐Ki,Hong Jong Sung,Kim Choong Ki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104505

Reference6 articles.

1. Study of a buried sin+P homojunction solar cell

2. WSi0.11Schottky gates for GaAs metal semiconductor field‐effect transistors

3. Plasma‐enhanced chemical vapor deposition of β‐tungsten, a metastable phase

4. Comparison of low‐pressure and plasma‐enhanced chemical vapor deposited tungsten thin films

5. Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition

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