Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/477/00009283.pdf?arnumber=9283
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metallization;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
2. CVD (Chemical Vapor Deposition);digital Encyclopedia of Applied Physics;2003-04-15
3. Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system;Thin Solid Films;1994-04
4. New insights on the effect of hydrogen to tungsten hexafluoride partial pressure ratio on plasma deposited tungsten thin films;Applied Physics Letters;1991-12-09
5. Rapid thermal annealing effects on the properties of plasma‐enhanced chemical vapor deposited tungsten films;Journal of Applied Physics;1991-08-15
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