Photoreflectance study in the E1 and E1+Δ1 transition regions of CdTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372994
Reference42 articles.
1. Electroreflectance at a Semiconductor-Electrolyte Interface
2. Electroreflectance Study of CdxHg1-xTe
3. An electroreflectance study of CdTe
4. Hg1−xCdxTe (0 ≦x ≦ 1): a correlation between stoichiometry, surface preparation and electroreflectance measurements
5. Thermoreflectance in Semiconductors
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1. Investigation of crystal structure and new ellipsometric properties of hexagonal CdS epilayers;Applied Surface Science;2011-10
2. Impurity levels and bandedge electronic structure in as-grown arsenic-doped HgCdTe by infrared photoreflectance spectroscopy;Physical Review B;2009-10-16
3. Surface dependent behaviour of CdS LO-phonon mode;Journal of Physics D: Applied Physics;2007-08-03
4. CdTe surface roughness by Raman spectroscopy using the 830nm wavelength;Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy;2006-09
5. Addendum to ‘Erratum to Photoreflectance study in theE1andE1+ Δ1transition regions of ZnTe and CdTe and in theE0andE0+ Δ0transition regions of GaP’;Journal of Physics D: Applied Physics;2006-03-30
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