Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories-Reference-Cited by-同舟云学术

Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

Published:2006-04-15 Issue:8 Volume:99 Page:08R702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yoshikawa M.,Kitagawa E.,Takahashi S.,Kai T.,Amano M.,Shimomura N.,Kishi T.,Ikegawa S.,Asao Y.,Yoda H.,Nagahara K.,Numata H.,Ishiwata N.,Hada H.,Tahara S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2165138

Reference6 articles.

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4. Edge-pinned states in patterned submicron NiFeCo structures

5. N. Shimomura et al., Proceedings of the INTERMAG Conference, Nagoya, Japan, 5–8 April 2005 [IEEE Trans. Magn.IEMGAQ0018-9464 41, 2652 (2005)].

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