Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis-Reference-Cited by-同舟云学术

Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis

Published:2014-09-04 Issue:10 Volume:53 Page:103001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kinoshita Keizo,Honjo Hiroaki,Fukami Shunsuke,Sato Hideo,Mizunuma Kotaro,Tokutome Keiichi,Murahata Michio,Ikeda Shoji,Miura Sadahiko,Kasai Naoki,Ohno Hideo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=10/a=103001/pdf

Reference43 articles.

1. Magnetic tunnel junction for nonvolatile CMOS logic

2. Ion etching for pattern delineation

3. Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory

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