1. J. Åkerman, Toward a universal memory. Science 308, 508–510 (2005)
2. R. Sbiaa, H. Meng, S.N. Piramanayagam, Materials with perpendicular magnetic anisotropy for magnetic random access memory. Physica Status Solidi (RRL) Rapid Res. Lett 5, 413–419 (2011)
3. E. Chen, D. Apalkov, Z. Diao, A. Driskill-Smith, D. Druist, D. Lottis et al., Advances and future prospects of spin-transfer torque random access memory. IEEE Trans. Magn. 46, 1873–1878 (2010)
4. J. Slaughter, R. Dave, M. DeHerrera, M. Durlam, B. Engel, J. Janesky et al., Fundamentals of MRAM technology. J. Supercond. 15, 19–25 (2002)
5. X. Dong, X. Wu, G. Sun, Y. Xie, H. Li, Y. Chen, Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement, in Design Automation Conference, 2008. DAC 2008. 45th ACM/IEEE (2008), pp. 554–559