A photoluminescence study of Cd‐related centers in InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336272
Reference44 articles.
1. Diffusion of Cd And Zn In InP between 550 and 650°C
2. Diffusion of Cd into InP at 680°C
3. Epitaxial growth of Cd‐doped InP from the vapor
4. LPE GROWTH AND CHARACTERIZATION OF CADMIUM AND BERYLLIUM DOPED InP AND In.7Ga.3As.6P.4
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