Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films-Reference-Cited by-同舟云学术

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

Published:2016-06-23 Issue:13 Volume:28 Page:4602-4607
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Wang Hsin-Ping¹²,Sutter-Fella Carolin M.,Lobaccaro Peter,Hettick Mark,Zheng Maxwell,Lien Der-Hsien¹²,Miller D. Westley,Warren Charles W.,Roe Ellis T.,Lonergan Mark C.,Guthrey Harvey L.³,Haegel Nancy M.³,Ager Joel W.,Carraro Carlo,Maboudian Roya,He Jr-Hau¹,Javey Ali

Affiliation:

1. Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. Institute of Photonics and Optoelectronics & Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan

3. National Center for Photovoltaics (NCPV), National Renewable Energy Laboratory, Golden, Colorado 80401, United States

Funder

Basic Energy Sciences

National Science Council Taiwan

King Abdullah University of Science and Technology

Office of Science

Swiss National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry