Time Dependence of Charge Transport in MIS Memory Transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654085
Reference4 articles.
1. Tunnel mechanism in MNOS structures
2. Theory of the thin-oxide m.n.o.s. memory transistor
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modified Fowler–Nordheim tunnelling for modelling charge injection into Si3N4 in an Al/Si3N4/Si structure;Applied Physics A;2012-07-21
2. Chapter 5 Multilayer dielectrics for memory applications;New Insulators, Devices and Radiation Effects;1999
3. New results on electron injection, hole injection, and trapping in MONOS nonvolatile memory devices;IEEE Transactions on Electron Devices;1985-05
4. Surface potential relaxation in a biased Hg1−xCdxTe metal‐insulator‐semiconductor capacitor;Applied Physics Letters;1983-02
5. Discharging process by multiple tunnelings in thin-oxide MNOS structures;IEEE Transactions on Electron Devices;1982-08
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