Calculated performance ofp+nInP solar cells with In0.52Al0.48As window layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105951
Reference3 articles.
1. Wide-bandgap epitaxial heterojunction windows for silicon solar cells
2. Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
3. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
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1. Improved power conversion efficiency of InP solar cells using organic window layers;Applied Physics Letters;2011-01-31
2. Improvement of conversion efficiency by In0.52Al0.48 As window layers for p+n InP solar cells;Solar Energy Materials and Solar Cells;1998-01
3. Al Ga1−)0.65In0.35As monolithic multijunction solar cells;Solar Energy Materials and Solar Cells;1995-04
4. Strained In0.40Al0.60As window layers for indium phosphide solar cells;Applied Physics Letters;1994-03-28
5. Chemical beam epitaxy of InP-based solar cells and tunnel junctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
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