An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons-Reference-Cited by-同舟云学术

An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons

Published:2011-10-15 Issue:8 Volume:110 Page:083713
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fischetti Massimo V.,Narayanan Sudarshan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3650249

Reference60 articles.

1. First-Principles Mobility Calculations and Atomic-Scale Interface Roughness in Nanoscale Structures

2. The Origin of Electron Mobility Enhancement in Strained MOSFETs

3. Theoretical investigation of surface roughness scattering in silicon nanowire transistors

4. Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations

5. 3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

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