Oxygen partial‐pressure dependence of the oxidation‐induced surface stacking faults in (100)nsilicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323610
Reference21 articles.
1. Oxidation induced stacking faults inn‐ andp‐type (100) silicon
2. Oxidation, defects and vacancy diffusion in silicon
3. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
4. Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O2Oxidation
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