Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping-Reference-Cited by-同舟云学术

Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping

Published:2018-08-21 Issue:7 Volume:124 Page:075103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Onuma T.¹²,Nakata Y.²,Sasaki K.²³,Masui T.³,Yamaguchi T.¹,Honda T.¹,Kuramata A.³,Yamakoshi S.³^ORCID,Higashiwaki M.²

Affiliation:

1. Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

2. National Institute of Information and Communications Technology, 4–2–1 Nukui-kitamachi, Koganei, Tokyo 184–8795, Japan

3. Tamura Corporation, 2–3–1 Hirosedai, Sayama, Saitama 350–1328, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030612

Reference48 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

3. Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3

4. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

5. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

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