Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123148
Reference10 articles.
1. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
4. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
5. Visible blind GaN p-i-n photodiodes
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