Structure of Sc2O3 films epitaxially grown on α-Al2O3 (0001)-Reference-Cited by-同舟云学术

Structure of Sc2O3 films epitaxially grown on α-Al2O3 (0001)

Published:2006-01-09 Issue:2 Volume:88 Page:021906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kortan A. R.,Kopylov N.,Kwo J.,Hong M.,Chen C. P.,Mannaerts J. P.,Liou S. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2163989

Reference8 articles.

1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

2. M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, C. M. Lee, and J. I. Chyi, Proceedings of 2000 IEEE International Symposium on Compound Semiconductors (IEEE, New York, 2000), p. 495.

3. Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

4. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

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