Observation of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355942
Reference11 articles.
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3. Critical Dose for Strained Layer Configurations;Physica Status Solidi (a);1996-05-16
4. Characterization of semiconductor sub-micron gratings: is there an alternative to scanning electron microscopy?;Semiconductor Science and Technology;1996-03-01
5. Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor deposition;Journal of Crystal Growth;1995-01
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