Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1800277
Reference22 articles.
1. Thin-film metrology of silicon-on-insulator materials
2. Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers
3. Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry
4. Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology
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3. A fully stress-parametrized model for the dielectric function of silicon-on-insulator layers;Semiconductor Science and Technology;2009-03-06
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