Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers-Reference-Cited by-同舟云学术

Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Published:2016-12-19 Issue:25 Volume:109 Page:251103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Goldflam M. D.¹,Kadlec E. A.¹,Olson B. V.¹,Klem J. F.¹,Hawkins S. D.¹,Parameswaran S.¹,Coon W. T.¹,Keeler G. A.¹,Fortune T. R.¹^ORCID,Tauke-Pedretti A.¹,Wendt J. R.¹,Shaner E. A.¹,Davids P. S.¹,Kim J. K.¹,Peters D. W.¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

U.S. Department of Energy (DOE)

Basic Energy Sciences (BES)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972844

Reference35 articles.

1. Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

2. Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

3. Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

4. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

5. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

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