Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
2. Department of Physics, University of Illinois, Chicago, Illinois 60607, USA
Funder
DOE | Office of Basic Energy Science
Missile Defense Agency (MDA)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939147
Reference26 articles.
1. “Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?
2. Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
3. Strained and Unstrained Layer Superlattices for Infrared Detection
4. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
5. Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
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