Epitaxial PbxZr1−xTiO3 on GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4792599
Reference20 articles.
1. Design of high electron mobility devices with composite nitride channels
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4. H. S. Craft, “ Spectroscopy of oxide-GaN interfaces,” Ph.D. dissertation (North Carolina State University, 2009).
5. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
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1. Epitaxial growth of full range of compositions of (1 1 1) PbZr1-Ti O3 on GaN;Journal of Crystal Growth;2020-05
2. Multiferroic LuFeO3 on GaN by molecular-beam epitaxy;Applied Physics Letters;2020-03-09
3. Integration of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films on conducting nanocrystalline diamond for high performance device applications;Applied Physics Letters;2018-07-16
4. Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52 Ti0.48 O3 on GaN/AlGaN/Si(111) Substrate;Advanced Materials Interfaces;2017-11-27
5. High-performance BiFe 0.95 Mn 0.05 O 3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO 2 bi-layer buffer;Materials Letters;2017-04
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