Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2898216
Reference19 articles.
1. Phase-change materials for rewriteable data storage
2. Phase change materials: From material science to novel storage devices
3. High Speed Chalcogenide Random Access Memory Based on Si2Sb2Te5
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