Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4812363
Reference17 articles.
1. Nonpolar and Semipolar Group III Nitride-Based Materials
2. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
3. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
4. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
5. Strain-induced polarization in wurtzite III-nitride semipolar layers
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