560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
Author:
Funder
CREST
Simons Foundation
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference37 articles.
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2. Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates;Semiconductor Science and Technology;2024-02-06
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