Transient and persistent current induced conductivity changes in GaAs/AlGaAs high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870422
Reference15 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
3. Detection of single photons using a field effect transistor with a layer of quantum dots
4. Nondestructive Real-Time Measurement of Charge and Spin Dynamics of Photoelectrons in a Double Quantum Dot
5. Shallow and deep donors in direct-gapn-typeAlxGa1−xAs:Sigrown by molecular-beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination;Journal of Applied Physics;2021-06-21
2. On measurement of the thermal diffusivity of moderate and heavily doped semiconductor samples using modulated photothermal infrared radiometry;Thermochimica Acta;2017-04
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