Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves-Reference-Cited by-同舟云学术

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Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves

Published:2006-06-19 Issue:25 Volume:88 Page:251905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ikeda Susumu,Saiki Koichiro,Tsutsui Ken,Edura Tomohiko,Wada Yasuo,Miyazoe Hiroyuki,Terashima Kazuo,Inaba Katsuhiko,Mitsunaga Toru,Shimada Toshihiro

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2216375

Reference22 articles.

1. Organic Thin Film Transistors for Large Area Electronics

2. Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors

3. Gate Voltage Dependent Resistance of a Single Organic Semiconductor Grain Boundary

4. Temperature and gate voltage dependent transport across a single organic semiconductor grain boundary

5. Effects of molecular alignment on carrier transport in organic transistors

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5. Molecular dynamics simulations of graphoepitaxy of organic semiconductors, sexithiophene, and pentacene: Molecular-scale mechanisms of organic graphoepitaxy;Japanese Journal of Applied Physics;2018-01-05

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