Further evidence for quantum confinement in porous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109380
Reference21 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. Visible electroluminescence from porous siliconnpheterojunction diodes
3. Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes
4. Optical Characterization of the Visible Photoluminescence from Porous Silicon
5. Porous silicon formation: A quantum wire effect
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1. Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method;Advances in Optical Technologies;2012-02-01
2. Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon;Journal of Nanomaterials;2009
3. Silicon nano-crystalline structures fabricated by a sequential plasma hydrogenation and annealing technique;Thin Solid Films;2008-03
4. Characterization of hydrogenated nanocrystalline silicon thin films prepared with various negative direct current biases;Journal of Materials Research;2008-03
5. Visible photoluminescence from a nanocrystalline porous silicon structure fabricated by a plasma hydrogenation and annealing method;Journal of Applied Physics;2007-02-15
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