Fabrication of high-quality GaAs-based photodetector arrays on Si-Reference-Cited by-同舟云学术

Fabrication of high-quality GaAs-based photodetector arrays on Si

Published:2017-04-10 Issue:15 Volume:110 Page:153505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim SangHyeon¹²,Geum Dae-Myeong¹³,Park Min-Su¹,Kim Ho-sung¹,Song Jin Dong¹²,Choi Won Jun¹

Affiliation:

1. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. Nanomaterials Science and Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon Metropolitan city 34113, South Korea

3. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4980122

Reference25 articles.

1. GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy

2. Photocurrent and photoconductance properties of a GaAs nanowire

3. High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

4. Ultrahigh-power-bandwidth product and nonlinear photoconductance performances of low-temperature-grown GaAs-based metal-semiconductor-metal traveling-wave photodetectors

5. High-Speed InGaP/GaAs p-i-n Photodiodes With Wide Spectral Range

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