Low frequency noise of ZnO based metal-semiconductor field-effect transistors
Author:
Affiliation:
1. Institut für Experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstraße 5, D-04103 Leipzig, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906292
Reference21 articles.
1. One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability
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4. Conduction mechanism and 1/fnoise in ZnO varistors
5. Experimental studies on 1/f noise
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