Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
Author:
Affiliation:
1. Univ. Grenoble Alpes, F-38000 Grenoble, France
2. CNRS, Institut NEEL, F-38000 Grenoble, France
3. CEA, INAC, F-38000 Grenoble, France
Funder
Agence Nationale de la Recherche (ANR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4947269
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1. Elastic energy relaxation and critical thickness for plastic deformation in the core-shell InGaAs/GaAs nanopillars
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5. Effects of Strain on the Carrier Mobility in Silicon Nanowires
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