Far‐infrared reflectivity studies of dielectric function of a Pb‐Sn‐Te epitaxial film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88039
Reference10 articles.
1. Far I.R. determination of the transverse optic lattice mode in PbTe at low temperature
2. Optical Dispersion of Lead Sulfide in the Infrared
3. Optical Dispersion of Lead Sulfide in the Infrared
4. Temperature Dependence of the Effective Masses in PbTe
5. Temperature Dependence of the Effective Masses in PbTe
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1. Investigations of the structural, optical, and electrical properties of Pb0.8Sn0.2Te layers grown on Si(100) using BaF2/CaF2 buffer;Thin Solid Films;2009-06
2. Optical Characterization of Semiconductors;Nondestructive Evaluation of Semiconductor Materials and Devices;1979
3. Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate;Thin Solid Films;1977-12
4. Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivity;Physical Review B;1976-03-15
5. Far-infrared reflectivity of PbTe films on NaCl substrates;Solid State Communications;1976-01
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