The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1897485
Reference35 articles.
1. Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor
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3. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
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5. Study of Sb condensation on InP(100) substrates previously cleaned by low energy Ar+ ion beam
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1. Study by AES and EELS spectroscopies of antimony and phosphorus evaporated on massive indium and on cleaned InP;Vacuum;2008-01
2. Segregation and desorption of antimony in InP (001) in MOVPE;Journal of Crystal Growth;2007-01
3. Growth by molecular beam epitaxy and interfacial reactivity of MnSb on InP(001);Journal of Crystal Growth;2006-11
4. Spectroscopic studies of compound semiconductor surfaces as it relates to the growth of nanomaterials;SPIE Proceedings;2006-08-31
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