Energy condition of isothermal magnetoelectric switching of perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked film
Author:
Affiliation:
1. Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
2. Advanced Technology Development Center, TDK Corporation, Chiba 272-0026, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5047563
Reference40 articles.
1. New Magnetic Anisotropy
2. Exchange bias
3. Exchange anisotropy — a review
4. Magnetotransport properties of magnetically soft spin‐valve structures (invited)
5. Magnetoelectric Switching of Exchange Bias
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2. Gate-induced switching of perpendicular exchange bias with very low coercivity in Pt/Co/Ir/Cr2O3/Pt epitaxial film;Applied Physics Letters;2023-02-06
3. Electric Control of Exchange Bias at Room Temperature by Resistive Switching via Electrochemical Metallization;ACS Applied Materials & Interfaces;2022-06-06
4. Low pressure drive of the domain wall in Pt/Co/Au/Cr2O3/Pt thin films by the magnetoelectric effect;Applied Physics Letters;2022-02-28
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