Lateral straggle of focused‐ion‐beam implanted Be in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107050
Reference15 articles.
1. Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation
2. Performance of the focused-ion-striped transistor (FIST)—A new MESFET structure produced by focused-ion-beam implantation
3. A tunable-frequency Gunn diode fabricated by focused ion-beam implantation
4. Increase in silicon charge coupled devices speed with focused ion beam implanted channels
5. Electron focusing with multiparallel one‐dimensional channels made by focused ion beam
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1. Introduction;Semiconductors (2nd Edition);2019-11
2. Lateral straggling and its influence on lateral diffusion in implantation with a focused ion beam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05
3. The Role of Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices;physica status solidi (b);2002-09
4. Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET;IEEE Transactions on Electron Devices;2002-06
5. Use of focused-ion-beam and modeling to optimize submicron MOSFET characteristics;IEEE Transactions on Electron Devices;1998
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