Lateral straggling and its influence on lateral diffusion in implantation with a focused ion beam-Reference-Cited by-同舟云学术

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Lateral straggling and its influence on lateral diffusion in implantation with a focused ion beam

Published:2011-05 Issue:9 Volume:269 Page:856-860
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Batabyal R.,Mahato J.C.,Roy A.,Roy S.,Bischoff L.,Dev B.N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

2. Electron focusing with multiparallel one‐dimensional channels made by focused ion beam

3. In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams

4. Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation

5. A tunable-frequency Gunn diode fabricated by focused ion-beam implantation

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1. TOF-SIMS Analysis Using Bi3+ as Primary Ions on Au Nanoparticles Supported by SiO2/Si: Providing Insight into Metal–Support Interactions;ACS Omega;2019-08-05

2. Applications in Other Fields;Surface Microscopy with Low Energy Electrons;2014

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