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Highly conductive grain boundaries in copper oxide thin films

Published:2016-06-21 Issue:23 Volume:119 Page:235303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Deuermeier Jonas¹²^ORCID,Wardenga Hans F.²,Morasch Jan²,Siol Sebastian²,Nandy Suman¹,Calmeiro Tomás¹,Martins Rodrigo¹,Klein Andreas²^ORCID,Fortunato Elvira¹

Affiliation:

1. Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal

2. Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Fundação para a Ciência e a Tecnologia (FCT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4954002

Reference52 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Etude spectrophotometrique de la serie jaune de Cu2O aux basses temperatures

3. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

4. A review of recent advances in transparent p-type Cu2O-based thin film transistors

5. Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of an extended defect cluster in cuprous oxide;Journal of Physics D: Applied Physics;2024-05-22

2. Grain boundary passivation in cuprous oxide thin films via nitrogen annealing;Materials Science in Semiconductor Processing;2024-03

3. Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films;Nanomaterials;2023-09-30

4. Effects of Cu2O thickness on the photoelectrochemical properties of Cu2O/WO3 heterostructure;Vacuum;2023-01

5. Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors;ACS Applied Materials & Interfaces;2022-12-12

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