Statistical mechanics based model for negative bias temperature instability induced degradation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1889226
Reference17 articles.
1. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
2. Interface‐trap generation at ultrathin SiO2(4–6 nm)‐Si interfaces during negative‐bias temperature aging
3. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
4. Mechanism of negative‐bias‐temperature instability
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