Observation of radiative and nonradiative tunneling in GaAs/AlxGa1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions-Reference-Cited by-同舟云学术

Observation of radiative and nonradiative tunneling in GaAs/AlxGa1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions

Published:1989-04-15 Issue:8 Volume:65 Page:3282-3285
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

de Lyon T. J.,Casey H. C.,Enquist P. M.,Hutchby J. A.,SpringThorpe A. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.342687

Reference13 articles.

1. Optimum emitter grading for heterojunction bipolar transistors

2. Doping effects and compositional grading in AlxGa1-xAs/GaAs heterojunction bipolar transistors

3. Comparison of compositionally graded to abrupt emitter‐base junctions used in the heterojunction bipolar transistor

4. Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

5. Surface recombination current and emitter compositional grading inNpnandPnpGaAs/AlxGa1−xAs heterojunction bipolar transistors

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