Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124445
Reference8 articles.
1. Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
2. Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
3. Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors
4. Scaled dielectric antifuse structure for field-programmable gate array applications
5. Heterojunction bipolar transistors with emitter barrier lowered by /spl delta/-doping
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1. Epitaxial Structure Design of a Long-Wavelength InAlGaAs/InP Transistor Laser;IEEE Journal of Quantum Electronics;2011-05
2. Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
3. Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure;Microelectronics Journal;2007-06
4. The influence of a -doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors;Superlattices and Microstructures;2005-03
5. A novel InP/InGaAs TEBT for ultralow current operations;IEEE Electron Device Letters;2003-03
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