Liquid phase epitaxial growth of (Al,Ga)As double‐heterostructure laser material in a sapphire boat
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330395
Reference11 articles.
1. Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer
2. Use of sapphire liners to eliminate edge growth in LPE (Al, Ga)As
3. Low threshold current density InGaAsP/InP lasers grown in a vertical liquid phase epitaxial system
4. Integrated GaAs-AlxGa1-xAs double-heterostructure laser with independently controlled optical output divergence
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral Distribution of Si-Related Defects and Carrier Density in GaAs Crystals;Physica Status Solidi (a);1989-01-16
2. Compositional Variation Related to the Growth Process in GaAlAs Epitaxial Layers;Journal of The Electrochemical Society;1988-04-01
3. Thickness control of Ga1−xAlxAs layers grown by liquid phase epitaxy at low growth temperature;Journal of Crystal Growth;1987-11
4. Mg doping in lpe grown AlGaAs and the temperature dependence of threshold current in injection lasers;Materials Letters;1986-09
5. Thermal effects on LPE layer thickness;Journal of Crystal Growth;1985-03
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