Structural, optical, and acoustic characterization of high-quality AlN thick films sputtered on Al2O3(0001) at low temperature for GHz-band electroacoustic devices applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1777809
Reference21 articles.
1. Nitride Semiconductors and Devices
2. Gigahertz-band electroacoustic devices based on AlN thick films sputtered on Al2O3 at low temperature
3. High quality aluminum nitride epitaxial layers grown on sapphire substrates
4. Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation
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