Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
Author:
Affiliation:
1. Department of Physics, University of York, Heslington West, York YO10 5DD, United Kingdom
Funder
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/9.0000154
Reference30 articles.
1. Colloquium : Spintronics in graphene and other two-dimensional materials
2. Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC
3. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
4. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
5. Calcium intercalation underneath N-layer graphene on 6H-SiC(0001)
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3. Room Temperature Ferromagnetism in Graphene/SiC(0001) System Intercalated by Fe and Co;physica status solidi (RRL) – Rapid Research Letters;2023-11-10
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