Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC-Reference-Cited by-同舟云学术

Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

Published:2019-01-18 Issue:2 Volume:2 Page:844-852
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Momeni Pakdehi D.¹^ORCID,Pierz K.¹,Wundrack S.¹,Aprojanz J.²,Nguyen T. T. N.³,Dziomba T.¹,Hohls F.¹^ORCID,Bakin A.⁴⁵,Stosch R.¹,Tegenkamp C.²³^ORCID,Ahlers F. J.¹,Schumacher H. W.¹

Affiliation:

1. Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany

2. Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany

3. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Straße 70, 09126 Chemnitz, Germany

4. Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer Straße 66, 38106 Braunschweig, Germany

5. Laboratory of Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6a, 38106 Braunschweig, Germany

Funder

Deutsche Forschungsgemeinschaft

School for Contacts in Nanosystems, Leibniz Universit?t Hannover

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b02093

Reference49 articles.

1. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

2. The quasi-free-standing nature of graphene on H-saturated SiC(0001)

3. Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices

4. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

5. Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

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