Comparison of epitaxial thin layer GaN and InP passivations on InGaAs∕GaAs near-surface quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2208557
Reference11 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization
3. Photoreflectance study of phosphorus passivation of GaAs (001)
4. GaAs surface passivation by deposition of an ultrathin InP‐related layer
5. Enhanced optical properties of in situ passivated near‐surface AlxGa1−xAs/GaAs quantum wells
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1. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20
2. Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces;Applied Surface Science;2014-09
3. Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers;Applied Physics Letters;2014-07-21
4. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures;Journal of Physics D: Applied Physics;2012-08-28
5. Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices;Journal of Applied Physics;2011-12-15
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