Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference38 articles.
1. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
2. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
3. Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
4. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
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3. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition;Semiconductor Science and Technology;2016-06-06
4. Protective capping and surface passivation of III-V nanowires by atomic layer deposition;AIP Advances;2016-01
5. Surface passivation of GaAs using atomic layer deposition grown MgO;Materials Research Express;2015-09-08
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