Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high‐purity, epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349036
Reference21 articles.
1. Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy
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3. Donor discrimination and bound exciton spectra in InP
4. Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy
5. Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium source
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On the origin of the luminescence band with hνm=1.5133 eV in gallium arsenide;Semiconductors;2001-05
2. Magneto‐photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures;Journal of Applied Physics;1995-08
3. Reflectivity and photoluminescence spectra of GaAs quantum wells in a magnetic field;Solid State Communications;1995-07
4. gallium arsenide (GaAs), shallow donors: chemical shifts, photoconductivity measurements and photoluminescence;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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