Effects of growth temperature on optical and deep level spectroscopy of high‐quality InP grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335423
Reference19 articles.
1. Electronically controlled metastable defect reaction in InP
2. Low pressure metalorganic chemical vapor deposition of InP and related compounds
3. The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition
4. Electron mobility and free-carrier absorption in InP; determination of the compensation ratio
5. Series resistance effects in semiconductor CV profiling
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP;Journal of Applied Physics;1997-04
2. DC characterization of fully ion-implanted p-n junctions into semi-insulating InP;IEEE Transactions on Electron Devices;1996-03
3. Optical Transient Current Spectroscopy of Deep Levels in Semi‐Insulating Indium Phosphide;Journal of The Electrochemical Society;1991-12-01
4. Heat treatments of InP wafers;Journal of Crystal Growth;1990-12
5. Heteroepitaxial growth and characterization of InP on Si substrates;Journal of Applied Physics;1990-07-15
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