Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

Published:2020-02-01 Issue:2 Volume:8 Page:021111
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Ghadi Hemant¹,McGlone Joe F.¹^ORCID,Jackson Christine M.¹^ORCID,Farzana Esmat¹,Feng Zixuan¹,Bhuiyan A. F. M. Anhar Uddin¹,Zhao Hongping¹²^ORCID,Arehart Aaron R.¹^ORCID,Ringel Steven A.¹²

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142313

Reference42 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

4. Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

5. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3

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