Stability of fully deuterated amorphous silicon thin-film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1862755
Reference16 articles.
1. High‐speed and high‐sensitivity silicon‐on‐insulator metal‐semiconductor‐metal photodetector with trench structure
2. Improved stability against light exposure in amorphous deuterated silicon alloy solar cell
3. A possible mechanism for improved light-induced degradation in deuterated amorphous-silicon alloy
4. Improved stability of deuterated amorphous silicon thin film transistors
5. Evidence for coupling of Si–Si lattice vibration and Si–D wagging vibration in deuterated amorphous silicon
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1. Nanostructured silicon and its application to solar cells, position sensors and thin film transistors;Philosophical Magazine;2009-10
2. Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process;Semiconductor Science and Technology;2009-06-30
3. Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature;Applied Physics Letters;2008-04-28
4. Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors;Journal of Non-Crystalline Solids;2006-06
5. Mechanisms for Defect Creation and Removal in Hydrogenated and Deuterated Amorphous Silicon Studied using Thin Film Transistors;MRS Proceedings;2006
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